Hydrogenated Amorphous Silicon Sensor Deposited on Integrated Circuit for Radiation Detection

Radiation detectors based on the deposition of a 10 to 30 mum thick hydrogenated amorphous silicon (a-Si:H) sensor directly on top of integrated circuits have been developed. The performance of this detector technology has been assessed for the first time in the context of particle detectors. Three...

Descripción completa

Detalles Bibliográficos
Autores principales: Despeisse, M, Anelli, G, Jarron, P, Kaplon, J, Moraes, D, Nardulli, A, Powolny, F, Wyrsch, N
Lenguaje:eng
Publicado: 2008
Materias:
Detectors and Experimental Techniques
Health Physics and Radiation Effects
Acceso en línea:https://dx.doi.org/10.1109/TNS.2008.918519
http://cds.cern.ch/record/1111409

Ejemplares similares

Ejemplares similares