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Terrestrial neutron-induced soft errors in advanced memory devices
Terrestrial neutron-induced soft errors in semiconductor memory devices are currently a major concern in reliability issues. Understanding the mechanism and quantifying soft-error rates are primarily crucial for the design and quality assurance of semiconductor memory devices. This book covers the r...
| Autores principales: | , , , , |
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| Lenguaje: | eng |
| Publicado: |
World Scientific
2008
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| Materias: | |
| Acceso en línea: | http://cds.cern.ch/record/1114799 |