Terrestrial neutron-induced soft errors in advanced memory devices

Terrestrial neutron-induced soft errors in semiconductor memory devices are currently a major concern in reliability issues. Understanding the mechanism and quantifying soft-error rates are primarily crucial for the design and quality assurance of semiconductor memory devices. This book covers the r...

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Detalles Bibliográficos
Autores principales: Nakamura, Takashi, Baba, Mamoru, Ibe, Eishi, Yahagi, Yasuo, Kameyama, Hideaki
Lenguaje:eng
Publicado: World Scientific 2008
Materias:
Engineering
Acceso en línea:http://cds.cern.ch/record/1114799
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author Nakamura, Takashi
Baba, Mamoru
Ibe, Eishi
Yahagi, Yasuo
Kameyama, Hideaki
author_facet Nakamura, Takashi
Baba, Mamoru
Ibe, Eishi
Yahagi, Yasuo
Kameyama, Hideaki
author_sort Nakamura, Takashi
collection CERN
description Terrestrial neutron-induced soft errors in semiconductor memory devices are currently a major concern in reliability issues. Understanding the mechanism and quantifying soft-error rates are primarily crucial for the design and quality assurance of semiconductor memory devices. This book covers the relevant up-to-date topics in terrestrial neutron-induced soft errors, and aims to provide succinct knowledge on neutron-induced soft errors to the readers by presenting several valuable and unique features. Sample Chapter(s). Chapter 1: Introduction (238 KB). Table A.30 mentioned in Appendix A.6 on
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institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2008
publisher World Scientific
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spelling cern-11147992021-04-22T01:46:02Zhttp://cds.cern.ch/record/1114799engNakamura, TakashiBaba, MamoruIbe, EishiYahagi, YasuoKameyama, HideakiTerrestrial neutron-induced soft errors in advanced memory devicesEngineeringTerrestrial neutron-induced soft errors in semiconductor memory devices are currently a major concern in reliability issues. Understanding the mechanism and quantifying soft-error rates are primarily crucial for the design and quality assurance of semiconductor memory devices. This book covers the relevant up-to-date topics in terrestrial neutron-induced soft errors, and aims to provide succinct knowledge on neutron-induced soft errors to the readers by presenting several valuable and unique features. Sample Chapter(s). Chapter 1: Introduction (238 KB). Table A.30 mentioned in Appendix A.6 on World Scientificoai:cds.cern.ch:11147992008
spellingShingle Engineering
Nakamura, Takashi
Baba, Mamoru
Ibe, Eishi
Yahagi, Yasuo
Kameyama, Hideaki
Terrestrial neutron-induced soft errors in advanced memory devices
title Terrestrial neutron-induced soft errors in advanced memory devices
title_full Terrestrial neutron-induced soft errors in advanced memory devices
title_fullStr Terrestrial neutron-induced soft errors in advanced memory devices
title_full_unstemmed Terrestrial neutron-induced soft errors in advanced memory devices
title_short Terrestrial neutron-induced soft errors in advanced memory devices
title_sort terrestrial neutron-induced soft errors in advanced memory devices
topic Engineering
url http://cds.cern.ch/record/1114799
work_keys_str_mv AT nakamuratakashi terrestrialneutroninducedsofterrorsinadvancedmemorydevices
AT babamamoru terrestrialneutroninducedsofterrorsinadvancedmemorydevices
AT ibeeishi terrestrialneutroninducedsofterrorsinadvancedmemorydevices
AT yahagiyasuo terrestrialneutroninducedsofterrorsinadvancedmemorydevices
AT kameyamahideaki terrestrialneutroninducedsofterrorsinadvancedmemorydevices

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