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Evaluation of Two SiGe HBT Technologies for the ATLAS sLHC Upgrade
As previously reported, silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) technologies promise several advantages over CMOS for the front-end readout electronics for the ATLAS upgrade. Since our last paper, we have evaluated the relative merits of the latest generations of IBM SiGe HB...
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| Lenguaje: | eng |
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CERN
2008
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| Acceso en línea: | https://dx.doi.org/10.5170/CERN-2008-008.111 http://cds.cern.ch/record/1158513 |