Evaluation of Two SiGe HBT Technologies for the ATLAS sLHC Upgrade

As previously reported, silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) technologies promise several advantages over CMOS for the front-end readout electronics for the ATLAS upgrade. Since our last paper, we have evaluated the relative merits of the latest generations of IBM SiGe HB...

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Detalles Bibliográficos
Autor principal: Ullán, M
Lenguaje:eng
Publicado: CERN 2008
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.5170/CERN-2008-008.111
http://cds.cern.ch/record/1158513
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author Ullán, M
author_facet Ullán, M
author_sort Ullán, M
collection CERN
description As previously reported, silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) technologies promise several advantages over CMOS for the front-end readout electronics for the ATLAS upgrade. Since our last paper, we have evaluated the relative merits of the latest generations of IBM SiGe HBT BiCMOS technologies, the 8WL and 8HP platforms. These 130nm SiGe technologies show promise to operate at lower power than CMOS technologies and would provide a viable alternative for the Silicon Strip Detector and Liquid Argon Calorimeter upgrades, provided that the radiation tolerance studies at multiple gamma and neutron irradiation levels, included in this in
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institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2008
publisher CERN
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spelling cern-11585132019-09-30T06:29:59Zdoi:10.5170/CERN-2008-008.111http://cds.cern.ch/record/1158513engUllán, MEvaluation of Two SiGe HBT Technologies for the ATLAS sLHC UpgradeDetectors and Experimental TechniquesAs previously reported, silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) technologies promise several advantages over CMOS for the front-end readout electronics for the ATLAS upgrade. Since our last paper, we have evaluated the relative merits of the latest generations of IBM SiGe HBT BiCMOS technologies, the 8WL and 8HP platforms. These 130nm SiGe technologies show promise to operate at lower power than CMOS technologies and would provide a viable alternative for the Silicon Strip Detector and Liquid Argon Calorimeter upgrades, provided that the radiation tolerance studies at multiple gamma and neutron irradiation levels, included in this inCERNoai:cds.cern.ch:11585132008
spellingShingle Detectors and Experimental Techniques
Ullán, M
Evaluation of Two SiGe HBT Technologies for the ATLAS sLHC Upgrade
title Evaluation of Two SiGe HBT Technologies for the ATLAS sLHC Upgrade
title_full Evaluation of Two SiGe HBT Technologies for the ATLAS sLHC Upgrade
title_fullStr Evaluation of Two SiGe HBT Technologies for the ATLAS sLHC Upgrade
title_full_unstemmed Evaluation of Two SiGe HBT Technologies for the ATLAS sLHC Upgrade
title_short Evaluation of Two SiGe HBT Technologies for the ATLAS sLHC Upgrade
title_sort evaluation of two sige hbt technologies for the atlas slhc upgrade
topic Detectors and Experimental Techniques
url https://dx.doi.org/10.5170/CERN-2008-008.111
http://cds.cern.ch/record/1158513
work_keys_str_mv AT ullanm evaluationoftwosigehbttechnologiesfortheatlasslhcupgrade

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