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Single-Event Upsets in Photodiodes for Multi-Gb/s Data Transmission
A Single-Event Upset study has been carried out on PIN photodiodes from a range of manufacturers. A total of 22 devices of eleven types from six vendors were exposed to a beam of 63 MeV protons. The angle of incidence of the proton beam was varied between normal and grazing incidence for three data-...
| Autores principales: | , , , , , , , |
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| Lenguaje: | eng |
| Publicado: |
CERN
2008
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.5170/CERN-2008-008.161 http://cds.cern.ch/record/1158528 |