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Single-Event Upsets in Photodiodes for Multi-Gb/s Data Transmission

A Single-Event Upset study has been carried out on PIN photodiodes from a range of manufacturers. A total of 22 devices of eleven types from six vendors were exposed to a beam of 63 MeV protons. The angle of incidence of the proton beam was varied between normal and grazing incidence for three data-...

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Detalles Bibliográficos
Autores principales:	Troska, J, Jimenez Pacheco, A, Amaral, L, Dris, S, Ricci, D, Sigaud, C, Vasey, F, Vichoudis, P
Lenguaje:	eng
Publicado:	CERN 2008
Materias:	Detectors and Experimental Techniques
Acceso en línea:	https://dx.doi.org/10.5170/CERN-2008-008.161 http://cds.cern.ch/record/1158528

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