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Radiation damage of SiGe HBT Technologies at different bias configurations
SiGe BiCMOS technologies are being proposed for the Front-end readout of the detectors in the middle region of the ATLAS-Upgrade. The radiation hardness of the SiGe bipolar transistors is being assessed for this application through irradiations with different particles. Biasing conditions during irr...
| Autores principales: | , , , , , |
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| Lenguaje: | eng |
| Publicado: |
CERN
2008
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.5170/CERN-2008-008.500 http://cds.cern.ch/record/1159870 |