Radiation damage of SiGe HBT Technologies at different bias configurations

SiGe BiCMOS technologies are being proposed for the Front-end readout of the detectors in the middle region of the ATLAS-Upgrade. The radiation hardness of the SiGe bipolar transistors is being assessed for this application through irradiations with different particles. Biasing conditions during irradiation of bipolar transistors or circuits have an influence on the damage and there is a risk of erroneous results. We have performed several irradiation experiments of SiGe devices from IHP in different bias conditions. We have observed a systematic trend in gamma irradiations, showing a smaller damage in transistors irradiated biased compared to shorted or floating terminals.