Radiation damage of SiGe HBT Technologies at different bias configurations

SiGe BiCMOS technologies are being proposed for the Front-end readout of the detectors in the middle region of the ATLAS-Upgrade. The radiation hardness of the SiGe bipolar transistors is being assessed for this application through irradiations with different particles. Biasing conditions during irr...

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Detalles Bibliográficos
Autores principales: Ullán, M, Díez, S, Lozano, M, Pellegrini, G, Knoll, D, Heinemann, B
Lenguaje:eng
Publicado: CERN 2008
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.5170/CERN-2008-008.500
http://cds.cern.ch/record/1159870
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author Ullán, M
Díez, S
Lozano, M
Pellegrini, G
Knoll, D
Heinemann, B
author_facet Ullán, M
Díez, S
Lozano, M
Pellegrini, G
Knoll, D
Heinemann, B
author_sort Ullán, M
collection CERN
description SiGe BiCMOS technologies are being proposed for the Front-end readout of the detectors in the middle region of the ATLAS-Upgrade. The radiation hardness of the SiGe bipolar transistors is being assessed for this application through irradiations with different particles. Biasing conditions during irradiation of bipolar transistors or circuits have an influence on the damage and there is a risk of erroneous results. We have performed several irradiation experiments of SiGe devices from IHP in different bias conditions. We have observed a systematic trend in gamma irradiations, showing a smaller damage in transistors irradiated biased compared to shorted or floating terminals.
id cern-1159870
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2008
publisher CERN
record_format invenio
spelling cern-11598702019-09-30T06:29:59Zdoi:10.5170/CERN-2008-008.500http://cds.cern.ch/record/1159870engUllán, MDíez, SLozano, MPellegrini, GKnoll, DHeinemann, BRadiation damage of SiGe HBT Technologies at different bias configurationsDetectors and Experimental TechniquesSiGe BiCMOS technologies are being proposed for the Front-end readout of the detectors in the middle region of the ATLAS-Upgrade. The radiation hardness of the SiGe bipolar transistors is being assessed for this application through irradiations with different particles. Biasing conditions during irradiation of bipolar transistors or circuits have an influence on the damage and there is a risk of erroneous results. We have performed several irradiation experiments of SiGe devices from IHP in different bias conditions. We have observed a systematic trend in gamma irradiations, showing a smaller damage in transistors irradiated biased compared to shorted or floating terminals.CERNoai:cds.cern.ch:11598702008
spellingShingle Detectors and Experimental Techniques
Ullán, M
Díez, S
Lozano, M
Pellegrini, G
Knoll, D
Heinemann, B
Radiation damage of SiGe HBT Technologies at different bias configurations
title Radiation damage of SiGe HBT Technologies at different bias configurations
title_full Radiation damage of SiGe HBT Technologies at different bias configurations
title_fullStr Radiation damage of SiGe HBT Technologies at different bias configurations
title_full_unstemmed Radiation damage of SiGe HBT Technologies at different bias configurations
title_short Radiation damage of SiGe HBT Technologies at different bias configurations
title_sort radiation damage of sige hbt technologies at different bias configurations
topic Detectors and Experimental Techniques
url https://dx.doi.org/10.5170/CERN-2008-008.500
http://cds.cern.ch/record/1159870
work_keys_str_mv AT ullanm radiationdamageofsigehbttechnologiesatdifferentbiasconfigurations
AT diezs radiationdamageofsigehbttechnologiesatdifferentbiasconfigurations
AT lozanom radiationdamageofsigehbttechnologiesatdifferentbiasconfigurations
AT pellegrinig radiationdamageofsigehbttechnologiesatdifferentbiasconfigurations
AT knolld radiationdamageofsigehbttechnologiesatdifferentbiasconfigurations
AT heinemannb radiationdamageofsigehbttechnologiesatdifferentbiasconfigurations

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