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Radiation Induced Point and Cluster-Related Defects with Strong Impact to Damage Properties of Silicon Detectors
This work focuses on the investigation of radiation induced defects responsible for the degradation of silicon detectors. Comparative studies of the defects induced by irradiation with 60Co- rays, 6 and 15 MeV electrons, 23 GeV protons and 1 MeV equivalent reactor neutrons revealed the existence of...
| Autores principales: | , , , |
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| Lenguaje: | eng |
| Publicado: |
2009
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1016/j.nima.2009.09.065 http://cds.cern.ch/record/1191277 |