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Radiation Induced Point and Cluster-Related Defects with Strong Impact to Damage Properties of Silicon Detectors

This work focuses on the investigation of radiation induced defects responsible for the degradation of silicon detectors. Comparative studies of the defects induced by irradiation with 60Co- rays, 6 and 15 MeV electrons, 23 GeV protons and 1 MeV equivalent reactor neutrons revealed the existence of...

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Autores principales: Pintiliie, Ioana, Lindstroem, Gunnar, Junkes, Alexandra, Fretwurst, Eckhart
Lenguaje:eng
Publicado: 2009
Materias:
Acceso en línea:https://dx.doi.org/10.1016/j.nima.2009.09.065
http://cds.cern.ch/record/1191277
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author Pintiliie, Ioana
Lindstroem, Gunnar
Junkes, Alexandra
Fretwurst, Eckhart
author_facet Pintiliie, Ioana
Lindstroem, Gunnar
Junkes, Alexandra
Fretwurst, Eckhart
author_sort Pintiliie, Ioana
collection CERN
description This work focuses on the investigation of radiation induced defects responsible for the degradation of silicon detectors. Comparative studies of the defects induced by irradiation with 60Co- rays, 6 and 15 MeV electrons, 23 GeV protons and 1 MeV equivalent reactor neutrons revealed the existence of point defects and cluster related centers having a strong impact on damage properties of Si diodes. The detailed relation between the microscopic reasons as based on defect analysis and their macroscopic consequences for detector performance are presented. In particular, it is shown that the changes in the Si device properties after exposure to high levels of 60Co- doses can be completely understood by the formation of two point defects, both depending strongly on the Oxygen concentration in the silicon bulk. Specific for hadron irradiation are the annealing effects which decrease resp. increase the originally observed damage effects as seen by the changes of the depletion voltage. A group of three cluster related defects, revealed as deep hole traps, proved to be responsible specifically for the reverse annealing. Their formation is not affected by the Oxygen content or Si growth procedure suggesting that they are complexes of multi-vacancies located inside extended disordered regions.
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institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2009
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spelling cern-11912772019-09-30T06:29:59Zdoi:10.1016/j.nima.2009.09.065http://cds.cern.ch/record/1191277engPintiliie, IoanaLindstroem, GunnarJunkes, AlexandraFretwurst, EckhartRadiation Induced Point and Cluster-Related Defects with Strong Impact to Damage Properties of Silicon Detectorsphysics.ins-detThis work focuses on the investigation of radiation induced defects responsible for the degradation of silicon detectors. Comparative studies of the defects induced by irradiation with 60Co- rays, 6 and 15 MeV electrons, 23 GeV protons and 1 MeV equivalent reactor neutrons revealed the existence of point defects and cluster related centers having a strong impact on damage properties of Si diodes. The detailed relation between the microscopic reasons as based on defect analysis and their macroscopic consequences for detector performance are presented. In particular, it is shown that the changes in the Si device properties after exposure to high levels of 60Co- doses can be completely understood by the formation of two point defects, both depending strongly on the Oxygen concentration in the silicon bulk. Specific for hadron irradiation are the annealing effects which decrease resp. increase the originally observed damage effects as seen by the changes of the depletion voltage. A group of three cluster related defects, revealed as deep hole traps, proved to be responsible specifically for the reverse annealing. Their formation is not affected by the Oxygen content or Si growth procedure suggesting that they are complexes of multi-vacancies located inside extended disordered regions.arXiv:0907.3050oai:cds.cern.ch:11912772009-07-20
spellingShingle physics.ins-det
Pintiliie, Ioana
Lindstroem, Gunnar
Junkes, Alexandra
Fretwurst, Eckhart
Radiation Induced Point and Cluster-Related Defects with Strong Impact to Damage Properties of Silicon Detectors
title Radiation Induced Point and Cluster-Related Defects with Strong Impact to Damage Properties of Silicon Detectors
title_full Radiation Induced Point and Cluster-Related Defects with Strong Impact to Damage Properties of Silicon Detectors
title_fullStr Radiation Induced Point and Cluster-Related Defects with Strong Impact to Damage Properties of Silicon Detectors
title_full_unstemmed Radiation Induced Point and Cluster-Related Defects with Strong Impact to Damage Properties of Silicon Detectors
title_short Radiation Induced Point and Cluster-Related Defects with Strong Impact to Damage Properties of Silicon Detectors
title_sort radiation induced point and cluster-related defects with strong impact to damage properties of silicon detectors
topic physics.ins-det
url https://dx.doi.org/10.1016/j.nima.2009.09.065
http://cds.cern.ch/record/1191277
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AT junkesalexandra radiationinducedpointandclusterrelateddefectswithstrongimpacttodamagepropertiesofsilicondetectors
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