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Single-Event Upsets in Photoreceivers for Multi-Gb/s Data Transmission
A Single-Event Upset study has been carried out on p-i-n photodiodes from a range of manufacturers. A total of 22 devices of 11 types from six vendors were exposed to a beam of 63 MeV protons. The angle of incidence of the proton beam was varied between normal and grazing incidence for three data ra...
| Autores principales: | , , , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2009
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1109/TNS.2009.2021836 http://cds.cern.ch/record/1269281 |