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Electrical properties of the sensitive side in Si edgeless detectors
Silicon edgeless detectors represent a novel type of detector that are being developed for close-to-beam applications in high-energy physics and for large-scale tiled 1D and 2D arrays used in radiation imaging. In this work, the electric field and potential distributions on the device cut side, key...
| Autores principales: | , , , , , , , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2009
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1016/j.nima.2009.01.055 http://cds.cern.ch/record/1274025 |