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Electrical properties of the sensitive side in Si edgeless detectors

Silicon edgeless detectors represent a novel type of detector that are being developed for close-to-beam applications in high-energy physics and for large-scale tiled 1D and 2D arrays used in radiation imaging. In this work, the electric field and potential distributions on the device cut side, key...

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Detalles Bibliográficos
Autores principales:	Verbitskaya, E, Ruggiero, G, Eremin, I, Ilyashenko, I, Cavallini, A, Castaldini, A, Pellegrini, G, Lozano, M, Golubkov, S, Egorov, N, Konkov, K, Tuuva, T
Lenguaje:	eng
Publicado:	2009
Materias:	Detectors and Experimental Techniques
Acceso en línea:	https://dx.doi.org/10.1016/j.nima.2009.01.055 http://cds.cern.ch/record/1274025

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