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Effect of fluence on the lattice site of implanted Er and implantation induced strain in GaN
A GaN thin film was implanted with 5 × 1014 cm−2 of 60 keV stable 166Er, followed by the implantation of 2 × 1013 cm−2 radioactive 167Tm (t1/2 = 9.3 d) and an annealing sequence up to 900 °C. The emission channeling (EC) technique was applied to assess the lattice location of Er following the Tm dec...
| Autores principales: | , , , , |
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| Lenguaje: | eng |
| Publicado: |
2009
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1016/j.nimb.2009.01.043 http://cds.cern.ch/record/1275091 |