Comparison of Emittance Growth for 450 GeV Rigidity PB82+ ions and P+ in Thin Scatterers

The beam profile screens in the long SPS-to-LHC transfer lines were used to measure with high precision the emittance growth arising from scattering. The effective thickness of the scatterer could be varied by adding thick Al2O3 fluorescent screens, with the emittance measurement made using very thi...

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Detalles Bibliográficos
Autores principales: Goddard, B, Kain, V, Meddahi, M
Lenguaje:eng
Publicado: 2010
Materias:
Accelerators and Storage Rings
Acceso en línea:http://cds.cern.ch/record/1277642
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author Goddard, B
Kain, V
Meddahi, M
author_facet Goddard, B
Kain, V
Meddahi, M
author_sort Goddard, B
collection CERN
description The beam profile screens in the long SPS-to-LHC transfer lines were used to measure with high precision the emittance growth arising from scattering. The effective thickness of the scatterer could be varied by adding thick Al2O3 fluorescent screens, with the emittance measurement made using very thin Ti OTR screens. The technique allows the intrinsic variation in the emittance from the injector chain to be factored out of the measurement, and was applied to Pb82+ and protons, both with 450 GeV rigidity. The results are presented and the possible applications to the accurate benchmarking of nuclear interaction codes discussed.
id cern-1277642
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2010
record_format invenio
spelling cern-12776422022-08-17T13:32:53Zhttp://cds.cern.ch/record/1277642engGoddard, BKain, VMeddahi, MComparison of Emittance Growth for 450 GeV Rigidity PB82+ ions and P+ in Thin ScatterersAccelerators and Storage RingsThe beam profile screens in the long SPS-to-LHC transfer lines were used to measure with high precision the emittance growth arising from scattering. The effective thickness of the scatterer could be varied by adding thick Al2O3 fluorescent screens, with the emittance measurement made using very thin Ti OTR screens. The technique allows the intrinsic variation in the emittance from the injector chain to be factored out of the measurement, and was applied to Pb82+ and protons, both with 450 GeV rigidity. The results are presented and the possible applications to the accurate benchmarking of nuclear interaction codes discussed.CERN-ATS-2010-127oai:cds.cern.ch:12776422010-06-01
spellingShingle Accelerators and Storage Rings
Goddard, B
Kain, V
Meddahi, M
Comparison of Emittance Growth for 450 GeV Rigidity PB82+ ions and P+ in Thin Scatterers
title Comparison of Emittance Growth for 450 GeV Rigidity PB82+ ions and P+ in Thin Scatterers
title_full Comparison of Emittance Growth for 450 GeV Rigidity PB82+ ions and P+ in Thin Scatterers
title_fullStr Comparison of Emittance Growth for 450 GeV Rigidity PB82+ ions and P+ in Thin Scatterers
title_full_unstemmed Comparison of Emittance Growth for 450 GeV Rigidity PB82+ ions and P+ in Thin Scatterers
title_short Comparison of Emittance Growth for 450 GeV Rigidity PB82+ ions and P+ in Thin Scatterers
title_sort comparison of emittance growth for 450 gev rigidity pb82+ ions and p+ in thin scatterers
topic Accelerators and Storage Rings
url http://cds.cern.ch/record/1277642
work_keys_str_mv AT goddardb comparisonofemittancegrowthfor450gevrigiditypb82ionsandpinthinscatterers
AT kainv comparisonofemittancegrowthfor450gevrigiditypb82ionsandpinthinscatterers
AT meddahim comparisonofemittancegrowthfor450gevrigiditypb82ionsandpinthinscatterers

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