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Study on 150 mu m thick n- and p-type epitaxial silicon sensors irradiated with 24-GeV/c protons and 1-MeV neutrons
A study on 150@mm epitaxial (EPI) n- and p-type silicon diodes irradiated with neutrons up to 8x10^1^5n/cm^2 and protons up to 1.7x10^1^5p/cm^2 has been performed by means of CV/IV, charge collection efficiency (CCE) and transient current techniqu e (TCT) measurements. It is found that the effective...
| Autores principales: | , , |
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| Lenguaje: | eng |
| Publicado: |
2010
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| Acceso en línea: | https://dx.doi.org/10.1016/j.nima.2009.08.018 http://cds.cern.ch/record/1279414 |