Study on 150 mu m thick n- and p-type epitaxial silicon sensors irradiated with 24-GeV/c protons and 1-MeV neutrons

A study on 150@mm epitaxial (EPI) n- and p-type silicon diodes irradiated with neutrons up to 8x10^1^5n/cm^2 and protons up to 1.7x10^1^5p/cm^2 has been performed by means of CV/IV, charge collection efficiency (CCE) and transient current techniqu e (TCT) measurements. It is found that the effective space charge density increases three times faster after proton than after neutron irradiation with a slightly higher effective space charge generation rate for n-type material compared to p-type materia l. A drop in charge collection efficiency already at fluences of 1x10^1^2n_e_q/cm^2 can be seen in n-type material, but is absent in p-type material. TCT measurements show space charge sign inversion from positive to negative charge in n-type material aft er neutron irradiation and from negative to positive space charge in p-type material after proton irradiation. No difference was found in the response of diodes manufactured by different producers out of the same wafer material.