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Device Physics of Narrow Gap Semiconductors
Narrow gap semiconductors obey the general rules of semiconductor science, but often exhibit extreme features of these rules because of the same properties that produce their narrow gaps. Consequently these materials provide sensitive tests of theory, and the opportunity for the design of innovative...
Autores principales: | , |
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Lenguaje: | eng |
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Springer
2010
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Materias: | |
Acceso en línea: | https://dx.doi.org/10.1007/978-1-4419-1040-0 http://cds.cern.ch/record/1315738 |
_version_ | 1780921377317978112 |
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author | Chu, Junhao Sher, Arden |
author_facet | Chu, Junhao Sher, Arden |
author_sort | Chu, Junhao |
collection | CERN |
description | Narrow gap semiconductors obey the general rules of semiconductor science, but often exhibit extreme features of these rules because of the same properties that produce their narrow gaps. Consequently these materials provide sensitive tests of theory, and the opportunity for the design of innovative devices. Narrow gap semiconductors are the most important materials for the preparation of advanced modern infrared systems. Device Physics of Narrow Gap Semiconductors offers descriptions of the materials science and device physics of these unique materials. Topics covered include impurities and defects, recombination mechanisms, surface and interface properties, and the properties of low dimensional systems for infrared applications. This book will help readers to understand not only the semiconductor physics and materials science, but also how they relate to advanced opto-electronic devices. The last chapter applies the understanding of device physics to photoconductive detectors, photovoltaic infrared detectors, super lattices and quantum wells, infrared lasers, and single photon infrared detectors. |
id | cern-1315738 |
institution | Organización Europea para la Investigación Nuclear |
language | eng |
publishDate | 2010 |
publisher | Springer |
record_format | invenio |
spelling | cern-13157382021-04-22T01:12:16Zdoi:10.1007/978-1-4419-1040-0http://cds.cern.ch/record/1315738engChu, JunhaoSher, ArdenDevice Physics of Narrow Gap SemiconductorsOther Fields of PhysicsNarrow gap semiconductors obey the general rules of semiconductor science, but often exhibit extreme features of these rules because of the same properties that produce their narrow gaps. Consequently these materials provide sensitive tests of theory, and the opportunity for the design of innovative devices. Narrow gap semiconductors are the most important materials for the preparation of advanced modern infrared systems. Device Physics of Narrow Gap Semiconductors offers descriptions of the materials science and device physics of these unique materials. Topics covered include impurities and defects, recombination mechanisms, surface and interface properties, and the properties of low dimensional systems for infrared applications. This book will help readers to understand not only the semiconductor physics and materials science, but also how they relate to advanced opto-electronic devices. The last chapter applies the understanding of device physics to photoconductive detectors, photovoltaic infrared detectors, super lattices and quantum wells, infrared lasers, and single photon infrared detectors.Springeroai:cds.cern.ch:13157382010 |
spellingShingle | Other Fields of Physics Chu, Junhao Sher, Arden Device Physics of Narrow Gap Semiconductors |
title | Device Physics of Narrow Gap Semiconductors |
title_full | Device Physics of Narrow Gap Semiconductors |
title_fullStr | Device Physics of Narrow Gap Semiconductors |
title_full_unstemmed | Device Physics of Narrow Gap Semiconductors |
title_short | Device Physics of Narrow Gap Semiconductors |
title_sort | device physics of narrow gap semiconductors |
topic | Other Fields of Physics |
url | https://dx.doi.org/10.1007/978-1-4419-1040-0 http://cds.cern.ch/record/1315738 |
work_keys_str_mv | AT chujunhao devicephysicsofnarrowgapsemiconductors AT sherarden devicephysicsofnarrowgapsemiconductors |