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Signal formation and active edge studies of 3D silicon detector technology
3D detectors and devices with an ‘active edge’ were fabricated at the Stanford Nanofabrication Facility. Characteristics such as time response and edge sensitivity were studied. The induced signals from a 3D detector were studied using a fast, low-noise transimpedance amplifier. The rise time of the...
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| Lenguaje: | eng |
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2011
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| Acceso en línea: | http://cds.cern.ch/record/1319609 |