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Transient conductance spectroscopy measurements of defect states in gamma-irradiated n-channel silicon field effect transistors with possible gamma-dosemeter applications
| Autores principales: | , , |
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| Lenguaje: | eng |
| Publicado: |
1980
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| Materias: | |
| Acceso en línea: | http://cds.cern.ch/record/132302 |