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Transient conductance spectroscopy measurements of defect states in gamma-irradiated n-channel silicon field effect transistors with possible gamma-dosemeter applications
| Autores principales: | , , |
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| Lenguaje: | eng |
| Publicado: |
1980
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| Materias: | |
| Acceso en línea: | http://cds.cern.ch/record/132302 |
| _version_ | 1780879403803213824 |
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| author | Pearton, S J Tavendale, A J Williams, A A |
| author_facet | Pearton, S J Tavendale, A J Williams, A A |
| author_sort | Pearton, S J |
| collection | CERN |
| id | cern-132302 |
| institution | Organización Europea para la Investigación Nuclear |
| language | eng |
| publishDate | 1980 |
| record_format | invenio |
| spelling | cern-1323022019-09-30T06:29:59Zhttp://cds.cern.ch/record/132302engPearton, S JTavendale, A JWilliams, A ATransient conductance spectroscopy measurements of defect states in gamma-irradiated n-channel silicon field effect transistors with possible gamma-dosemeter applicationsHealth Physics and Radiation EffectsAAEC-E-504oai:cds.cern.ch:1323021980 |
| spellingShingle | Health Physics and Radiation Effects Pearton, S J Tavendale, A J Williams, A A Transient conductance spectroscopy measurements of defect states in gamma-irradiated n-channel silicon field effect transistors with possible gamma-dosemeter applications |
| title | Transient conductance spectroscopy measurements of defect states in gamma-irradiated n-channel silicon field effect transistors with possible gamma-dosemeter applications |
| title_full | Transient conductance spectroscopy measurements of defect states in gamma-irradiated n-channel silicon field effect transistors with possible gamma-dosemeter applications |
| title_fullStr | Transient conductance spectroscopy measurements of defect states in gamma-irradiated n-channel silicon field effect transistors with possible gamma-dosemeter applications |
| title_full_unstemmed | Transient conductance spectroscopy measurements of defect states in gamma-irradiated n-channel silicon field effect transistors with possible gamma-dosemeter applications |
| title_short | Transient conductance spectroscopy measurements of defect states in gamma-irradiated n-channel silicon field effect transistors with possible gamma-dosemeter applications |
| title_sort | transient conductance spectroscopy measurements of defect states in gamma-irradiated n-channel silicon field effect transistors with possible gamma-dosemeter applications |
| topic | Health Physics and Radiation Effects |
| url | http://cds.cern.ch/record/132302 |
| work_keys_str_mv | AT peartonsj transientconductancespectroscopymeasurementsofdefectstatesingammairradiatednchannelsiliconfieldeffecttransistorswithpossiblegammadosemeterapplications AT tavendaleaj transientconductancespectroscopymeasurementsofdefectstatesingammairradiatednchannelsiliconfieldeffecttransistorswithpossiblegammadosemeterapplications AT williamsaa transientconductancespectroscopymeasurementsofdefectstatesingammairradiatednchannelsiliconfieldeffecttransistorswithpossiblegammadosemeterapplications |