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Transient conductance spectroscopy measurements of defect states in gamma-irradiated n-channel silicon field effect transistors with possible gamma-dosemeter applications
Autores principales: | Pearton, S J, Tavendale, A J, Williams, A A |
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Lenguaje: | eng |
Publicado: |
1980
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Materias: | |
Acceso en línea: | http://cds.cern.ch/record/132302 |
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