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Characterisation of a Pixel Sensor in 0.20 micron SOI Technology for Charged Particle Tracking
This paper presents the results of the characterisation of a pixel sensor manufactured in OKI 0.2 micron SOI technology integrated on a high-resistivity substrate, and featuring several pixel cell layouts for charge collection optimisation. The sensor is tested with short IR laser pulses, X-rays and...
Autores principales: | , , , , , , , |
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Lenguaje: | eng |
Publicado: |
2011
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Materias: | |
Acceso en línea: | https://dx.doi.org/10.1016/j.nima.2011.05.081 http://cds.cern.ch/record/1334083 |