Characterisation of a Pixel Sensor in 0.20 micron SOI Technology for Charged Particle Tracking

This paper presents the results of the characterisation of a pixel sensor manufactured in OKI 0.2 micron SOI technology integrated on a high-resistivity substrate, and featuring several pixel cell layouts for charge collection optimisation. The sensor is tested with short IR laser pulses, X-rays and...

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Detalles Bibliográficos
Autores principales: Battaglia, Marco, Bisello, Dario, Contarato, Devis, Denes, Peter, Giubilato, Piero, Mattiazzo, Serena, Pantano, Devis, Zalusky, Sarah
Lenguaje:eng
Publicado: 2011
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1016/j.nima.2011.05.081
http://cds.cern.ch/record/1334083
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author Battaglia, Marco
Bisello, Dario
Contarato, Devis
Denes, Peter
Giubilato, Piero
Mattiazzo, Serena
Pantano, Devis
Zalusky, Sarah
author_facet Battaglia, Marco
Bisello, Dario
Contarato, Devis
Denes, Peter
Giubilato, Piero
Mattiazzo, Serena
Pantano, Devis
Zalusky, Sarah
author_sort Battaglia, Marco
collection CERN
description This paper presents the results of the characterisation of a pixel sensor manufactured in OKI 0.2 micron SOI technology integrated on a high-resistivity substrate, and featuring several pixel cell layouts for charge collection optimisation. The sensor is tested with short IR laser pulses, X-rays and 200 GeV pions. We report results on charge collection, particle detection efficiency and single point resolution.
id cern-1334083
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2011
record_format invenio
spelling cern-13340832023-03-14T17:35:51Zdoi:10.1016/j.nima.2011.05.081http://cds.cern.ch/record/1334083engBattaglia, MarcoBisello, DarioContarato, DevisDenes, PeterGiubilato, PieroMattiazzo, SerenaPantano, DevisZalusky, SarahCharacterisation of a Pixel Sensor in 0.20 micron SOI Technology for Charged Particle TrackingDetectors and Experimental TechniquesThis paper presents the results of the characterisation of a pixel sensor manufactured in OKI 0.2 micron SOI technology integrated on a high-resistivity substrate, and featuring several pixel cell layouts for charge collection optimisation. The sensor is tested with short IR laser pulses, X-rays and 200 GeV pions. We report results on charge collection, particle detection efficiency and single point resolution.This paper presents the results of the characterisation of a pixel sensor manufactured in OKI 0.2 micron SOI technology integrated on a high-resistivity substrate, and featuring several pixel cell layouts for charge collection optimisation. The sensor is tested with short IR laser pulses, X-rays and 200 GeV pions. We report results on charge collection, particle detection efficiency and single point resolution.arXiv:1103.0881oai:cds.cern.ch:13340832011-03-07
spellingShingle Detectors and Experimental Techniques
Battaglia, Marco
Bisello, Dario
Contarato, Devis
Denes, Peter
Giubilato, Piero
Mattiazzo, Serena
Pantano, Devis
Zalusky, Sarah
Characterisation of a Pixel Sensor in 0.20 micron SOI Technology for Charged Particle Tracking
title Characterisation of a Pixel Sensor in 0.20 micron SOI Technology for Charged Particle Tracking
title_full Characterisation of a Pixel Sensor in 0.20 micron SOI Technology for Charged Particle Tracking
title_fullStr Characterisation of a Pixel Sensor in 0.20 micron SOI Technology for Charged Particle Tracking
title_full_unstemmed Characterisation of a Pixel Sensor in 0.20 micron SOI Technology for Charged Particle Tracking
title_short Characterisation of a Pixel Sensor in 0.20 micron SOI Technology for Charged Particle Tracking
title_sort characterisation of a pixel sensor in 0.20 micron soi technology for charged particle tracking
topic Detectors and Experimental Techniques
url https://dx.doi.org/10.1016/j.nima.2011.05.081
http://cds.cern.ch/record/1334083
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