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Rare Earth Doped III-Nitrides for Optoelectronic and Spintronic Applications
This book provides a snapshot of recent progress in the field of rare-earth-doped group III-nitride semiconductors, especially GaN, but extending to AlN and the alloys AlGaN, AlInN and InGaN. This material class is currently enjoying an upsurge in interest due to its ideal suitability for both optoe...
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| Lenguaje: | eng |
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Springer
2010
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| Acceso en línea: | https://dx.doi.org/10.1007/978-90-481-2877-8 http://cds.cern.ch/record/1338682 |