Bridgman growth and site occupation in LuAG:Ce scintillator crystals

LuAG:Ce single crystals with various activator concentrations were grown by the vertical Bridgman technique. Characterization of crystals was done in terms of actual doping level, macroscopic defects and degree of non-equivalent substitutions by Lu for Al in octahedral lattice sites. Scintillation m...

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Detalles Bibliográficos
Autores principales: Petrosyan, AG, Lecoq, P, Ovanesyan, K L, Shirinyan, G O, Dujardin, C, Abler, D, Auffray, E, Pedrini, C, Sargsyan, R V, Petrosyan, A G
Lenguaje:eng
Publicado: 2010
Materias:
Other Fields of Physics
Acceso en línea:https://dx.doi.org/10.1016/j.jcrysgro.2010.07.042
http://cds.cern.ch/record/1359258

Internet

https://dx.doi.org/10.1016/j.jcrysgro.2010.07.042
http://cds.cern.ch/record/1359258

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