Bridgman growth and site occupation in LuAG:Ce scintillator crystals

LuAG:Ce single crystals with various activator concentrations were grown by the vertical Bridgman technique. Characterization of crystals was done in terms of actual doping level, macroscopic defects and degree of non-equivalent substitutions by Lu for Al in octahedral lattice sites. Scintillation m...

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Detalles Bibliográficos
Autores principales: Petrosyan, AG, Lecoq, P, Ovanesyan, K L, Shirinyan, G O, Dujardin, C, Abler, D, Auffray, E, Pedrini, C, Sargsyan, R V, Petrosyan, A G
Lenguaje:eng
Publicado: 2010
Materias:
Other Fields of Physics
Acceso en línea:https://dx.doi.org/10.1016/j.jcrysgro.2010.07.042
http://cds.cern.ch/record/1359258
Descripción
Sumario:LuAG:Ce single crystals with various activator concentrations were grown by the vertical Bridgman technique. Characterization of crystals was done in terms of actual doping level, macroscopic defects and degree of non-equivalent substitutions by Lu for Al in octahedral lattice sites. Scintillation measurements were performed using 2 x 2 x 8 mm(3) shaped samples with Ce concentration in the range 0.05-0.55 at\%. Essential improvement of performance was demonstrated in samples containing >= 0.2 at\% of Ce; the light yield measured in LuAG:Ce (0.55 at\%) was about 26000 ph/MeV, or close to that of LSO.(C) 2010 Elsevier B.V. All rights reserved.

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