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Bridgman growth and site occupation in LuAG:Ce scintillator crystals
LuAG:Ce single crystals with various activator concentrations were grown by the vertical Bridgman technique. Characterization of crystals was done in terms of actual doping level, macroscopic defects and degree of non-equivalent substitutions by Lu for Al in octahedral lattice sites. Scintillation m...
Autores principales: | , , , , , , , , , |
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Lenguaje: | eng |
Publicado: |
2010
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Materias: | |
Acceso en línea: | https://dx.doi.org/10.1016/j.jcrysgro.2010.07.042 http://cds.cern.ch/record/1359258 |
_version_ | 1780922615713497088 |
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author | Petrosyan, AG Lecoq, P Ovanesyan, K L Shirinyan, G O Dujardin, C Abler, D Auffray, E Pedrini, C Sargsyan, R V Petrosyan, A G |
author_facet | Petrosyan, AG Lecoq, P Ovanesyan, K L Shirinyan, G O Dujardin, C Abler, D Auffray, E Pedrini, C Sargsyan, R V Petrosyan, A G |
author_sort | Petrosyan, AG |
collection | CERN |
description | LuAG:Ce single crystals with various activator concentrations were grown by the vertical Bridgman technique. Characterization of crystals was done in terms of actual doping level, macroscopic defects and degree of non-equivalent substitutions by Lu for Al in octahedral lattice sites. Scintillation measurements were performed using 2 x 2 x 8 mm(3) shaped samples with Ce concentration in the range 0.05-0.55 at\%. Essential improvement of performance was demonstrated in samples containing >= 0.2 at\% of Ce; the light yield measured in LuAG:Ce (0.55 at\%) was about 26000 ph/MeV, or close to that of LSO.(C) 2010 Elsevier B.V. All rights reserved. |
id | cern-1359258 |
institution | Organización Europea para la Investigación Nuclear |
language | eng |
publishDate | 2010 |
record_format | invenio |
spelling | cern-13592582019-09-30T06:29:59Zdoi:10.1016/j.jcrysgro.2010.07.042http://cds.cern.ch/record/1359258engPetrosyan, AGLecoq, POvanesyan, K LShirinyan, G ODujardin, CAbler, DAuffray, EPedrini, CSargsyan, R VPetrosyan, A GBridgman growth and site occupation in LuAG:Ce scintillator crystalsOther Fields of PhysicsLuAG:Ce single crystals with various activator concentrations were grown by the vertical Bridgman technique. Characterization of crystals was done in terms of actual doping level, macroscopic defects and degree of non-equivalent substitutions by Lu for Al in octahedral lattice sites. Scintillation measurements were performed using 2 x 2 x 8 mm(3) shaped samples with Ce concentration in the range 0.05-0.55 at\%. Essential improvement of performance was demonstrated in samples containing >= 0.2 at\% of Ce; the light yield measured in LuAG:Ce (0.55 at\%) was about 26000 ph/MeV, or close to that of LSO.(C) 2010 Elsevier B.V. All rights reserved.oai:cds.cern.ch:13592582010 |
spellingShingle | Other Fields of Physics Petrosyan, AG Lecoq, P Ovanesyan, K L Shirinyan, G O Dujardin, C Abler, D Auffray, E Pedrini, C Sargsyan, R V Petrosyan, A G Bridgman growth and site occupation in LuAG:Ce scintillator crystals |
title | Bridgman growth and site occupation in LuAG:Ce scintillator crystals |
title_full | Bridgman growth and site occupation in LuAG:Ce scintillator crystals |
title_fullStr | Bridgman growth and site occupation in LuAG:Ce scintillator crystals |
title_full_unstemmed | Bridgman growth and site occupation in LuAG:Ce scintillator crystals |
title_short | Bridgman growth and site occupation in LuAG:Ce scintillator crystals |
title_sort | bridgman growth and site occupation in luag:ce scintillator crystals |
topic | Other Fields of Physics |
url | https://dx.doi.org/10.1016/j.jcrysgro.2010.07.042 http://cds.cern.ch/record/1359258 |
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