Impact of NBTI Aging on the Single-Event Upset of SRAM Cells

We analyzed the impact of negative bias temperature instability (NBTI) on the single-event upset rate of SRAM cells through experiments and SPICE simulations. We performed critical charge simulations introducing different degradation patterns in the cells, in three technology nodes, from 180 to 90 n...

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Detalles Bibliográficos
Autores principales: Bagatin, M, Faccio, Federico, Gerardin, Simone, Paccagnella, Alessandro, Bagatin, Marta
Lenguaje:eng
Publicado: 2010
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1109/TNS.2010.2084100
http://cds.cern.ch/record/1359267
_version_ 1780922617216106496
author Bagatin, M
Faccio, Federico
Gerardin, Simone
Paccagnella, Alessandro
Bagatin, Marta
author_facet Bagatin, M
Faccio, Federico
Gerardin, Simone
Paccagnella, Alessandro
Bagatin, Marta
author_sort Bagatin, M
collection CERN
description We analyzed the impact of negative bias temperature instability (NBTI) on the single-event upset rate of SRAM cells through experiments and SPICE simulations. We performed critical charge simulations introducing different degradation patterns in the cells, in three technology nodes, from 180 to 90 nm. The simulations results were checked with alpha-particle and heavy-ion irradiations on a 130-nm technology. Both simulations and experimental results show that NBTI degradation does not significantly affect the single-event upset SRAM cell rate as long as the parametric drift induced by aging is within 10\%.
id cern-1359267
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2010
record_format invenio
spelling cern-13592672019-09-30T06:29:59Zdoi:10.1109/TNS.2010.2084100http://cds.cern.ch/record/1359267engBagatin, MFaccio, FedericoGerardin, SimonePaccagnella, AlessandroBagatin, MartaImpact of NBTI Aging on the Single-Event Upset of SRAM CellsDetectors and Experimental TechniquesWe analyzed the impact of negative bias temperature instability (NBTI) on the single-event upset rate of SRAM cells through experiments and SPICE simulations. We performed critical charge simulations introducing different degradation patterns in the cells, in three technology nodes, from 180 to 90 nm. The simulations results were checked with alpha-particle and heavy-ion irradiations on a 130-nm technology. Both simulations and experimental results show that NBTI degradation does not significantly affect the single-event upset SRAM cell rate as long as the parametric drift induced by aging is within 10\%.oai:cds.cern.ch:13592672010
spellingShingle Detectors and Experimental Techniques
Bagatin, M
Faccio, Federico
Gerardin, Simone
Paccagnella, Alessandro
Bagatin, Marta
Impact of NBTI Aging on the Single-Event Upset of SRAM Cells
title Impact of NBTI Aging on the Single-Event Upset of SRAM Cells
title_full Impact of NBTI Aging on the Single-Event Upset of SRAM Cells
title_fullStr Impact of NBTI Aging on the Single-Event Upset of SRAM Cells
title_full_unstemmed Impact of NBTI Aging on the Single-Event Upset of SRAM Cells
title_short Impact of NBTI Aging on the Single-Event Upset of SRAM Cells
title_sort impact of nbti aging on the single-event upset of sram cells
topic Detectors and Experimental Techniques
url https://dx.doi.org/10.1109/TNS.2010.2084100
http://cds.cern.ch/record/1359267
work_keys_str_mv AT bagatinm impactofnbtiagingonthesingleeventupsetofsramcells
AT facciofederico impactofnbtiagingonthesingleeventupsetofsramcells
AT gerardinsimone impactofnbtiagingonthesingleeventupsetofsramcells
AT paccagnellaalessandro impactofnbtiagingonthesingleeventupsetofsramcells
AT bagatinmarta impactofnbtiagingonthesingleeventupsetofsramcells

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