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Single Event Gate Rupture in 130-nm CMOS Transistor Arrays Subjected to X-Ray Irradiation
We present new experimental results on heavy ion-induced gate rupture on deep submicron CMOS transistor arrays. Through the use of dedicated test structures, composed by a large number of 130-nm MOSFETs connected in parallel, we show the response to heavy ion irradiation under high stress voltages o...
| Autores principales: | , , , , |
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| Lenguaje: | eng |
| Publicado: |
2010
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1109/TNS.2009.2039002 http://cds.cern.ch/record/1359302 |