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Prediction of the Response of the Commercial BPW34FS Silicon p-i-n Diode Used as Radiation Monitoring Sensors up to Very High Fluences
The effect of radiation damage on Silicon p-i-n diodes has been studied. I-V characteristics of BPW34FS silicon p-i-n diodes irradiated with 24 GeV/c protons up to 6.3 x 10(15) n(eq)/cm(2) have been measured and analyzed. A parameterization predicting the radiation response in the fluence range rele...
| Autores principales: | , , , , |
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| Lenguaje: | eng |
| Publicado: |
2010
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1109/TNS.2010.2044191 http://cds.cern.ch/record/1359303 |