Prediction of the Response of the Commercial BPW34FS Silicon p-i-n Diode Used as Radiation Monitoring Sensors up to Very High Fluences

The effect of radiation damage on Silicon p-i-n diodes has been studied. I-V characteristics of BPW34FS silicon p-i-n diodes irradiated with 24 GeV/c protons up to 6.3 x 10(15) n(eq)/cm(2) have been measured and analyzed. A parameterization predicting the radiation response in the fluence range rele...

Descripción completa

Detalles Bibliográficos
Autores principales: Mekki, J, Fahrer, M, Glaser, M, Moll, M, Dusseau, L
Lenguaje:eng
Publicado: 2010
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1109/TNS.2010.2044191
http://cds.cern.ch/record/1359303
Descripción
Sumario:The effect of radiation damage on Silicon p-i-n diodes has been studied. I-V characteristics of BPW34FS silicon p-i-n diodes irradiated with 24 GeV/c protons up to 6.3 x 10(15) n(eq)/cm(2) have been measured and analyzed. A parameterization predicting the radiation response in the fluence range relevant for the use of the diodes as radiation monitors in Super-LHC experiments is presented.

Ejemplares similares