Prediction of the Response of the Commercial BPW34FS Silicon p-i-n Diode Used as Radiation Monitoring Sensors up to Very High Fluences

The effect of radiation damage on Silicon p-i-n diodes has been studied. I-V characteristics of BPW34FS silicon p-i-n diodes irradiated with 24 GeV/c protons up to 6.3 x 10(15) n(eq)/cm(2) have been measured and analyzed. A parameterization predicting the radiation response in the fluence range rele...

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Detalles Bibliográficos
Autores principales: Mekki, J, Fahrer, M, Glaser, M, Moll, M, Dusseau, L
Lenguaje:eng
Publicado: 2010
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1109/TNS.2010.2044191
http://cds.cern.ch/record/1359303
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author Mekki, J
Fahrer, M
Glaser, M
Moll, M
Dusseau, L
author_facet Mekki, J
Fahrer, M
Glaser, M
Moll, M
Dusseau, L
author_sort Mekki, J
collection CERN
description The effect of radiation damage on Silicon p-i-n diodes has been studied. I-V characteristics of BPW34FS silicon p-i-n diodes irradiated with 24 GeV/c protons up to 6.3 x 10(15) n(eq)/cm(2) have been measured and analyzed. A parameterization predicting the radiation response in the fluence range relevant for the use of the diodes as radiation monitors in Super-LHC experiments is presented.
id cern-1359303
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2010
record_format invenio
spelling cern-13593032019-09-30T06:29:59Zdoi:10.1109/TNS.2010.2044191http://cds.cern.ch/record/1359303engMekki, JFahrer, MGlaser, MMoll, MDusseau, LPrediction of the Response of the Commercial BPW34FS Silicon p-i-n Diode Used as Radiation Monitoring Sensors up to Very High FluencesDetectors and Experimental TechniquesThe effect of radiation damage on Silicon p-i-n diodes has been studied. I-V characteristics of BPW34FS silicon p-i-n diodes irradiated with 24 GeV/c protons up to 6.3 x 10(15) n(eq)/cm(2) have been measured and analyzed. A parameterization predicting the radiation response in the fluence range relevant for the use of the diodes as radiation monitors in Super-LHC experiments is presented.oai:cds.cern.ch:13593032010
spellingShingle Detectors and Experimental Techniques
Mekki, J
Fahrer, M
Glaser, M
Moll, M
Dusseau, L
Prediction of the Response of the Commercial BPW34FS Silicon p-i-n Diode Used as Radiation Monitoring Sensors up to Very High Fluences
title Prediction of the Response of the Commercial BPW34FS Silicon p-i-n Diode Used as Radiation Monitoring Sensors up to Very High Fluences
title_full Prediction of the Response of the Commercial BPW34FS Silicon p-i-n Diode Used as Radiation Monitoring Sensors up to Very High Fluences
title_fullStr Prediction of the Response of the Commercial BPW34FS Silicon p-i-n Diode Used as Radiation Monitoring Sensors up to Very High Fluences
title_full_unstemmed Prediction of the Response of the Commercial BPW34FS Silicon p-i-n Diode Used as Radiation Monitoring Sensors up to Very High Fluences
title_short Prediction of the Response of the Commercial BPW34FS Silicon p-i-n Diode Used as Radiation Monitoring Sensors up to Very High Fluences
title_sort prediction of the response of the commercial bpw34fs silicon p-i-n diode used as radiation monitoring sensors up to very high fluences
topic Detectors and Experimental Techniques
url https://dx.doi.org/10.1109/TNS.2010.2044191
http://cds.cern.ch/record/1359303
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AT fahrerm predictionoftheresponseofthecommercialbpw34fssiliconpindiodeusedasradiationmonitoringsensorsuptoveryhighfluences
AT glaserm predictionoftheresponseofthecommercialbpw34fssiliconpindiodeusedasradiationmonitoringsensorsuptoveryhighfluences
AT mollm predictionoftheresponseofthecommercialbpw34fssiliconpindiodeusedasradiationmonitoringsensorsuptoveryhighfluences
AT dusseaul predictionoftheresponseofthecommercialbpw34fssiliconpindiodeusedasradiationmonitoringsensorsuptoveryhighfluences

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