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Isotopic fingerprints of Pt-containing luminescence centers in highly enriched Si-28
Recently we have shown that the reduction in the photoluminescence linewidth of many deep luminescence centers in highly enriched Si-28 results in well-resolved isotopic fingerprints. This allows for a better characterization of a defect center, as not only the involvement of a specific element but...
Autores principales: | , , , , , , , , , , , , , , , , |
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Lenguaje: | eng |
Publicado: |
2010
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Materias: | |
Acceso en línea: | https://dx.doi.org/10.1103/PhysRevB.81.235217 http://cds.cern.ch/record/1359335 |