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Test beam results of heavily irradiated magnetic Czochralski silicon (MCz-Si) strip detectors
Strip detectors with an area of 16 cm(2) were processed on high resistivity n-type magnetic Czochralski silicon. In addition, detectors were processed on high resistivity Float Zone wafers with the same mask set for comparison. The detectors were irradiated to several different fluences up to the fl...
Autores principales: | , , , , , , , , , , , , , , , , , , , , , , , , , , |
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Lenguaje: | eng |
Publicado: |
2010
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Materias: | |
Acceso en línea: | https://dx.doi.org/10.1016/j.nima.2009.08.017 http://cds.cern.ch/record/1359388 |
Sumario: | Strip detectors with an area of 16 cm(2) were processed on high resistivity n-type magnetic Czochralski silicon. In addition, detectors were processed on high resistivity Float Zone wafers with the same mask set for comparison. The detectors were irradiated to several different fluences up to the fluence of 3 x 10(15) 1 MeV n(eq)/cm(2) with protons or with mixed protons and neutrons. The detectors were fully characterized with CV- and IV-measurements prior to and after the irradiation. The beam test was carried out at the CERN H2 beam line using a silicon beam telescope that determines the tracks of the incoming particles and hence provides a reference measurement for the detector characterization. The n-type MCz-Si strip detectors have an acceptable SIN at least up to the fluence of 1 x 10(15) n(eq)/cm(2) and thus, they are a feasible option for the strip detector layers in the SLHC tracking systems. (C) 2009 Elsevier B.V. All rights reserved. |
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