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The effect of radiation of the energy resolution of ion implanted silicon detectors

Detalles Bibliográficos
Autores principales: Borgeaud, P, McEwen, J G, Rancoita, P G, Seidman, A
Lenguaje:eng
Publicado: 1983
Materias:
Acceso en línea:https://dx.doi.org/10.1016/0167-5087(83)90260-0
http://cds.cern.ch/record/138524
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author Borgeaud, P
McEwen, J G
Rancoita, P G
Seidman, A
author_facet Borgeaud, P
McEwen, J G
Rancoita, P G
Seidman, A
author_sort Borgeaud, P
collection CERN
id cern-138524
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 1983
record_format invenio
spelling cern-1385242019-09-30T06:29:59Zdoi:10.1016/0167-5087(83)90260-0http://cds.cern.ch/record/138524engBorgeaud, PMcEwen, J GRancoita, P GSeidman, AThe effect of radiation of the energy resolution of ion implanted silicon detectorsDetectors and Experimental TechniquesDPHPE-82-04oai:cds.cern.ch:1385241983
spellingShingle Detectors and Experimental Techniques
Borgeaud, P
McEwen, J G
Rancoita, P G
Seidman, A
The effect of radiation of the energy resolution of ion implanted silicon detectors
title The effect of radiation of the energy resolution of ion implanted silicon detectors
title_full The effect of radiation of the energy resolution of ion implanted silicon detectors
title_fullStr The effect of radiation of the energy resolution of ion implanted silicon detectors
title_full_unstemmed The effect of radiation of the energy resolution of ion implanted silicon detectors
title_short The effect of radiation of the energy resolution of ion implanted silicon detectors
title_sort effect of radiation of the energy resolution of ion implanted silicon detectors
topic Detectors and Experimental Techniques
url https://dx.doi.org/10.1016/0167-5087(83)90260-0
http://cds.cern.ch/record/138524
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