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Signal development in irradiated silicon detectors

This work provides a detailed study of signal formation in silicon detectors, with the emphasis on detectors with high concentration of irradiation induced defects in the lattice. These defects give rise to deep energy levels in the band gap. As a consequence, the current induced by charge motion in...

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Detalles Bibliográficos
Autor principal: Kramberger, Gregor
Lenguaje:eng
Publicado: Stefan Inst., Ljubljana 2001
Materias:
Acceso en línea:http://cds.cern.ch/record/1390490