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Signal development in irradiated silicon detectors
This work provides a detailed study of signal formation in silicon detectors, with the emphasis on detectors with high concentration of irradiation induced defects in the lattice. These defects give rise to deep energy levels in the band gap. As a consequence, the current induced by charge motion in...
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| Lenguaje: | eng |
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Stefan Inst., Ljubljana
2001
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| Acceso en línea: | http://cds.cern.ch/record/1390490 |