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Performance of n-in-p pixel detectors irradiated at fluences up to $5x10^{15} n_{eq}/cm^{2}$ for the future ATLAS upgrades
We present the results of the characterization of novel n-in-p planar pixel detectors, designed for the future upgrades of the ATLAS pixel system. N-in-p silicon devices are a promising candidate to replace the n-in-n sensors thanks to their radiation hardness and cost effectiveness, that allow for...
| Autores principales: | , , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2011
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1016/j.phpro.2012.02.447 http://cds.cern.ch/record/1392481 |