Performance of n-in-p pixel detectors irradiated at fluences up to $5x10^{15} n_{eq}/cm^{2}$ for the future ATLAS upgrades

We present the results of the characterization of novel n-in-p planar pixel detectors, designed for the future upgrades of the ATLAS pixel system. N-in-p silicon devices are a promising candidate to replace the n-in-n sensors thanks to their radiation hardness and cost effectiveness, that allow for...

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Detalles Bibliográficos
Autores principales: Macchiolo, A., Gallrapp, C., La Rosa, A., Nisius, R., Pernegger, H., Richter, R.H., Weigell, P.
Lenguaje:eng
Publicado: 2011
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1016/j.phpro.2012.02.447
http://cds.cern.ch/record/1392481

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