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Evidence for As lattice location and Ge bound exciton luminescence in ZnO implanted with $^{73}$As and $^{73}$Ge
The results of photoluminescence (PL) measurements performed on high quality single crystal ZnO implanted with radioactive (73)Ga and (73)As, both of which decay to stable (73)Ge, are presented. Identical effects are observed in the two cases, with a sharp line at 3.3225(5) eV found to grow in inten...
| Autores principales: | , , , , |
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| Lenguaje: | eng |
| Publicado: |
2011
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1103/PhysRevB.83.125205 http://cds.cern.ch/record/1399837 |