Characterisation of a Thin Fully Depleted SOI Pixel Sensor with High Momentum Charged Particles

This paper presents the results of the characterisation of a thin, fully depleted pixel sensor manufactured in SOI technology on high-resistivity substrate with high momentum charged particles. The sensor is thinned to 70 $\mu$m and a thin phosphor layer contact is implanted on the back-plane. Its r...

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Detalles Bibliográficos
Autores principales: Battaglia, Marco, Bisello, Dario, Contarato, Devis, Denes, Peter, Giubilato, Piero, Mattiazzo, Serena, Pantano, Devis
Lenguaje:eng
Publicado: 2012
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1016/j.nima.2012.02.019
http://cds.cern.ch/record/1422227

Internet

https://dx.doi.org/10.1016/j.nima.2012.02.019
http://cds.cern.ch/record/1422227

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