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Characterisation of a Thin Fully Depleted SOI Pixel Sensor with High Momentum Charged Particles
This paper presents the results of the characterisation of a thin, fully depleted pixel sensor manufactured in SOI technology on high-resistivity substrate with high momentum charged particles. The sensor is thinned to 70 $\mu$m and a thin phosphor layer contact is implanted on the back-plane. Its r...
| Autores principales: | , , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2012
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1016/j.nima.2012.02.019 http://cds.cern.ch/record/1422227 |