Characterization of a commercial 65 nm CMOS technology for SLHC applications

The radiation characteristics with respect to Total Ionizing Dose (TID) and Single-Event Upsets (SEUs) of a 65 nm CMOS technology have been investigated. Single transistor structures of a variety of dimensions and several basic circuits were designed and fabricated. The circuits include a 64-kbit sh...

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Detalles Bibliográficos
Autores principales: Bonacini, S, Valerio, P., Avramidou, R, Ballabriga, R, Faccio, F, Kloukinas, K, Marchioro, A
Formato: info:eu-repo/semantics/article
Lenguaje:eng
Publicado: JINST 2012
Materias:
Detectors and Experimental Techniques
3: Microelectronics and interconnection technology
3.3: Shareable IP Blocks for HEP
Acceso en línea:https://dx.doi.org/10.1088/1748-0221/7/01/P01015
http://cds.cern.ch/record/1428524

Internet

https://dx.doi.org/10.1088/1748-0221/7/01/P01015
http://cds.cern.ch/record/1428524

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