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Characterization of a commercial 65 nm CMOS technology for SLHC applications
The radiation characteristics with respect to Total Ionizing Dose (TID) and Single-Event Upsets (SEUs) of a 65 nm CMOS technology have been investigated. Single transistor structures of a variety of dimensions and several basic circuits were designed and fabricated. The circuits include a 64-kbit sh...
Autores principales: | Bonacini, S, Valerio, P., Avramidou, R, Ballabriga, R, Faccio, F, Kloukinas, K, Marchioro, A |
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Formato: | info:eu-repo/semantics/article |
Lenguaje: | eng |
Publicado: |
JINST
2012
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Materias: | |
Acceso en línea: | https://dx.doi.org/10.1088/1748-0221/7/01/P01015 http://cds.cern.ch/record/1428524 |
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