Fowler-Nordheim field emission: effects in semiconductor nanostructures

This monograph solely presents the Fowler-Nordheim field emission (FNFE) from semiconductors and their nanostructures. The materials considered are quantum confined non-linear optical, III-V, II-VI, Ge, Te, carbon nanotubes, PtSb2, stressed materials, Bismuth, GaP, Gallium Antimonide, II-V, Bi2Te3,...

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Detalles Bibliográficos
Autores principales: Bhattacharya, Sitangshu, Ghatak, Kamakhya Prasad
Lenguaje:eng
Publicado: Springer 2012
Materias:
Other Fields of Physics
Acceso en línea:https://dx.doi.org/10.1007/978-3-642-20493-7
http://cds.cern.ch/record/1433744

Internet

https://dx.doi.org/10.1007/978-3-642-20493-7
http://cds.cern.ch/record/1433744

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