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Fowler-Nordheim field emission: effects in semiconductor nanostructures
This monograph solely presents the Fowler-Nordheim field emission (FNFE) from semiconductors and their nanostructures. The materials considered are quantum confined non-linear optical, III-V, II-VI, Ge, Te, carbon nanotubes, PtSb2, stressed materials, Bismuth, GaP, Gallium Antimonide, II-V, Bi2Te3,...
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| Lenguaje: | eng |
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Springer
2012
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| Acceso en línea: | https://dx.doi.org/10.1007/978-3-642-20493-7 http://cds.cern.ch/record/1433744 |