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Intense terahertz excitation of semiconductors

This work presents the first comprehensive treatment of high-power terahertz applications to semiconductors and low-dimensional semiconductor structures. Terahertz properties of semiconductors are in the centre of scientific activities because of the need of high-speed electronics.

Detalles Bibliográficos
Autores principales: Ganichev, S D, Prettl, W
Lenguaje:eng
Publicado: Oxford University Press 2006
Materias:
Acceso en línea:https://dx.doi.org/10.1093/acprof:oso/9780198528302.001.0001
http://cds.cern.ch/record/1447844